de-bonding with induction of semiconductor wafer

Objective: A client specializing in the semiconductor industry started to work to implement a new process and wants to use induction heating technology.

This application test’s objective is to de-bond a silicon wafer from the flat surface of a cylindrical piece of steel. The size of the steel is 6” dia. x 1.5” h (15.24 cm x 3.81 cm).

Silicon wafers are very thin and fragile slices of semiconductors that temporarily bond to the steel with superglue.

One way to separate wafers from steel without cracking is the thermal process. In this case, we used heating with induction.

Our main goal was to heat the surface of steel on one side without heating the rest of the steel. The target temperature must be up to 250° C and the cycle time must be as short as possible to de-bond the superglue and slide the wafer.

Industry: Semiconductor & Crystal Growing

Equipment: We used UltraHeat SM – 5kW induction heating system with water cooling and a custom induction coil – designed and manufactured for the application test.

Process: After several tests and simulations, we estimate the required max temperature of heating – 250° C. Silicon wafer was successfully de-bonded without thermal cracking after 1 minute and 45 seconds approximately. We used the power of 5 kW and increase the coupling gap to 5 mm to reduce the risk of thermal shock on the wafer.

Benefits: With induction heating, the process of sliding silicon wafers from their steel wares can happen faster and cleaner. Proper use of power supplies with the correct settings could reduce energy efficiency and increase productivity. Also, the process could be atomized.

Reference Info: Application Note 3463-6800

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