Induction Heating Silicon Carbide
To generate plasma, we apply an electrical field to a gas, with the goal of removing electrons from their nuclei. These free-flowing electrons give the plasma key properties, including its electrical conductivity, a magnetic field, and sensitivity to external electromagnetic fields.
In this application test, the customer provided sample parts to be induction heated. Ultraflex demonstrated the ability of the UPT-SB High Frequency Induction system to heat the silicon carbide cylinder to 2700-2800°F (1480-1540°C) within three minutes. This demonstrated the feasibility of the system for induction heating silicon carbide for plasma research.
Ultraheat UPT-SB Megahertz System
• Silicon carbide cylinder, with 1.22” (30.988mm) OD and 0.5” (12.7mm) ID
Temperature: 2700-2800°F (1480-1540°C)
Power: 1 kW
Time: 180 seconds
- The silicon carbide cylinder was centered in a single turn coil.
- The UPT-SB3, which operates up to 1 MHz was turned on.
- The part was heated to approximately 2700-2800°F in 180 seconds. This demonstrated the feasibility of this system for induction heating silicon carbide for plasma research.
- Precise control of the time and temperature
- Power on demand with rapid heat cycles
- Repeatable process, not operator dependent
- Safe heating with no open flames
- Energy efficient heating