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Induction Heating Silicon Carbide for plasma research

///Induction Heating Silicon Carbide for plasma research
Induction Heating Silicon Carbide for plasma research 2017-07-06T10:20:22+00:00

induction heating a Silicon Carbide cylinder

Objective
To generate plasma, we apply an electrical field to a gas, with the goal of removing electrons from their nuclei. These free-flowing electrons give the plasma key properties, including its electrical conductivity, a magnetic field, and sensitivity to external electromagnetic fields.

In this application test, the customer provided sample parts to be induction heated. Ultraflex demonstrated the ability of the UPT-SB High Frequency Induction system to heat the silicon carbide cylinder to 2700-28000F (1480-1540°C) within three minutes. This demonstrated the feasibility of the system for Induction Heating Silicon Carbide for plasma research.

Equipment
Ultraheat UPT-SB Megahertz System

Materials
• Silicon Carbide cylinder, with 1.22” OD and 0.5” ID

Key Parameters
Temperature: 2700-28000F (1480-1540°C)
Power: 1 kW
Time: 180 seconds
Frequency: 1 MHz

Process:

  1. The silicon carbide cylinder was centered in a single turn coil.
  2. The UPT-SB3, which operates up to 1 MHz was turned on.
  3. The part was heated to approximately 2700-2800oF in 180 seconds. This demonstrated the feasibility of this system for Induction Heating Silicon Carbide for plasma research.

Results/Benefits:

  • Precise control of the time and temperature
  • Power on demand with rapid heat cycles
  • Repeatable process, not operator dependent
  • Safe heating with no open flames
  • Energy efficient heating

Pictures

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